MOSFET archives - Page 198 of 1244

Part Number: IRF540A

Function: 100V, 28A, Advanced Power MOSFET

Package: TO-220 Type

Manufacturer: Fairchild Semiconductor

Image and Pinouts:

IRF540A datasheet

Description

This is 100V, 28A, Advanced Power MOSFET. (Metal-Oxide-Semiconductor Field-Effect Transistor)

It is commonly used as a switch in power electronics applications, where its low on-resistance
and fast switching speed make it well-suited for high-efficiency power conversion systems.

Features

1. Avalanche Rugged Technology

2. Rugged Gate Oxide Technology

3. Lower Input Capacitance

4. Improved Gate Charge

5. Extended Safe Operating Area

6. 175 Operating Temperature

7. Lower Leakage Current : 10 A (Max.) @ VDS= 100V

8. Lower RDS(ON) : 0.041 (Typ.)
Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 100 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 28 A

4. Total Power Dissipation: Pd = 107 W

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

Other data sheets are available within the file: IRF540-A, IRF540

IRF540A Datasheet PDF Download

Description

The 2SJ178 is a p-channel vertical type MOSFET switching device which can be directly driven from an IC operating with a 5V single power supply.

The device featuring low ON-state resistance is of the voltage drive type and thus is ideal for driving actuators such as motors, solenoids, and relays.

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = – 30 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 1 A

4. Total Power Dissipation: Pd = 750 mW

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. High-speed switching.

MOSFET

IRF540A Datasheet PDF – 100V, 28A, Advanced MOSFET

Description

Features

IRF540A Datasheet PDF Download

2SJ178 Datasheet PDF – P-Ch, 30V, 1A, MOSFET, Transistor

Description

2SJ178 Datasheet PDF Download