BSS138W Datasheet PDF – 50V, 210mA, N-Channel MOSFET

Part Number: BSS138W, Marking : 138

Function: 50V, 0.21A, N-Channel MOSFET

Package: SOT-323 Type

Manufacturer: ON Semiconducotor, Fairchild Semiconductor

Image and Pinouts:

BSS138W datasheet

 

General

Description

This is 50V, 210mA, N-Channel Logic Level Enhancement Mode Field Effect Transistor.

These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

 

Features

1. Rds(on)= 3.5Ω @ Vgs= 10V, Id= 0.22A

2. Rds(on)= 6.0Ω @ Vgs= 4.5V, Id= 0.22A

3. High density cell design for extremely low Rds(on)

4. Rugged and Reliable

5. Compact industry standard SOT-323 surface mount package

 

Absolute maximum ratings ( Ta=25°C )

BSS138W Field Effect Transistor

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 50 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 0.21 A

4. Channel temperature: Tch = 150 °C

5. Storage temperature: Tstg = -55 to +150 °C

Application:

This product is general usage and suitable for many different applications.

BSS138W Datasheet PDF Download


BSS138W pdf

Other data sheets are available within the file: BSS138

IRF640 Datasheet – 200V, Mesh Overlay MOSFET (Transistor)

This is one of the types of MOSFETs and is a kind of transistor.

The IRF640 is  N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

Part Number: IRF640, IRF640FP

Function: N-CHANNEL, 200V – 0.15 ohm – 18A  MESH OVERLAY MOSFET

Package: TO-220, TO-220FP Type

Manufacturer: STMicroelectronics

Image

irf640-mosfet

Description

This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources.

 

Pinout

irf640-datasheet-pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 16 A
4. Drain power dissipation : PD = 136 W
8. Channel temperature: Tch = -55 to +175 °C
9. Storage temperature: Tstg = -55 to +175 °C

Features

1. Extremely high dv/dt capability
2. Very low intrinsic capacitances
3. Gate charge minimized
4. Single Pulse Avalanche Energy Rated
5. SOA is Power Dissipation Limited
6. Nanosecond Switching Speed
7. Linear Transfer Characteristics
8. High Input Impedance

 

Applications

1. Switching application

 

IRF640 Datasheet

IRF640 pdf


 

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