MOSFET

K2225 Datasheet – 1500V, 2A, N-Ch, MOSFET, Transistor

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What is K2225?

This MOSFET has a maximum drain-source voltage rating of 1500 volts and a maximum continuous drain current rating of 2 amperes. It also has a low on-state resistance and fast switching speed, making it suitable for high-power applications.

Part Number: 2SK2225

Function: 1500V, 2A, N-Channel MOSFET, Transistor

Package: TO-3PFM Type

Manufacturer: Renesas Electronics

Image and Pinouts:

K2225 datasheet

 

Description

This is 1500V, 2A, Silicon N-Channel MOSFET. MOSFETs are a type of field-effect transistor that are commonly used in electronic circuits for power amplification and switching applications. It is commonly used in power supply circuits, audio amplifiers, and motor control circuits, among other applications.

Features

1. High speed power switching

2. High breakdown voltage (VDSS= 1500 V)

3. High speed switching

4. Low drive current

5. No Secondary breakdown

6. Suitable for switching regulator, DC-DC converter

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 1500 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 2 A

4. Channel dissipation: Pch = 50 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Application:

1. High speed power switching

Other data sheets are available within the file: 2SK2225, 2SK2225-E

K2225 Datasheet PDF Download


K2225 pdf

5N50C Datasheet PDF – 500V, 5A, N-Ch, MOSFET – Fairchild

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: 5N50C, FQPF5N50C

Function: 500V, 5A, N-Channel MOSFET

Package: TO-220, TO-220F Type

Manufacturer: Fairchild Semiconductor

Image

5n50c-mosfet-fairchild

 

Description

The 5N50C is 500V, 5A, N-Channel MOSFET.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

 

Pinout

5n50c-datasheet-pinout

 

Features

1. 5A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V

2. Low gate charge ( typical 18nC)

3. Low Crss ( typical 15pF)

4. Fast switching

5. 100% avalanche tested

6. Improved dv/dt capability

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 5 A

4. Operating temperature : Tj = -55 to +150 °C

5. Storage temperature: Tstg = -55 to +150 °C

 

5N50C Datasheet PDF


 

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