Part Number: F530NS

Function: 100V, 17A, HEXFET Power MOSFET

Package: D2PaK, TO-262 Type Type

Manufacturer: International Rectifier

Image:

 

Description

This is 100V, 17A, HEXFET Power MOSFET.

Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on esistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

 

Features

1. Advanced Process Technology

2. Ultra Low On-Resistance

3. Dynamic dv/dt Rating

4. 175°C Operating Temperature

5. Fast Switching

6. Fully Avalanche Rated

Other data sheets are available within the file: IRF530NS, IRF530NL, F530NL

 

F530NS Datasheet PDF Download

Similar features and reference parts

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: SUD50N06-36

Function: N-Channel 60-V (D-S), 150 °C MOSFET

Package: TO-252 type

Manufacturer: Vishay Semiconductors

Image and Pinouts:

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 12 A

4. Drain power dissipation : PD = 24 W

5. Single pulse avalanche energy : Eas = 11.2 mJ

6. Avalanche curren : Iar = 15 mJ

7. Channel temperature: Tch = 150 °C

8. Storage temperature: Tstg = -55 to +150 °C

Features

1. TrenchFET Power MOSFET
2. 100 % Rg & UIS Tested

Applications:

1. LCD TV Inverter
2. Push Pull Converter

Other data sheets are available within the file: SUD50N06

SUD50N06-36 Datasheet PDF Download