Part Number: F530NS

Function: 100V, 17A, HEXFET Power MOSFET

Package: D2PaK, TO-262 Type Type

Manufacturer: International Rectifier

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Description

This is 100V, 17A, HEXFET Power MOSFET.

Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on esistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

 

Features

1. Advanced Process Technology

2. Ultra Low On-Resistance

3. Dynamic dv/dt Rating

4. 175°C Operating Temperature

5. Fast Switching

6. Fully Avalanche Rated

Other data sheets are available within the file: IRF530NS, IRF530NL, F530NL

 

F530NS Datasheet PDF Download

Similar features and reference parts

Part Number: BSS138L

Function: 200mA, 50V, Power MOSFET

Package: SOT-23 Type

Manufacturer: ON Semiconductor

Image and Pinouts:

 

Description

This is 200mA, 50V, Power N-Channel MOSFET.

Features

1. Low Threshold Voltage (Vgs(th): 0.5 V−1.5 V) Makes it Ideal for Low Voltage Applications

2. Miniature SOT−23 Surface Mount Package Saves Board Space

3. BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

4. These Devices are Pb−Free and are RoHS Compliant

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 50 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 200 mA

4. Total Power Dissipation: Pd = 225 mW

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

 

Typical applications:

1. DC−DC converters, power management in portable

2. Battery−powered products such as computers, printers

3. PCMCIA cards, cellular and cordless telephones.

 

 

Other data sheets are available within the file: BSS138

BSS138L Datasheet PDF Download