Part Number: 2SK2221

Function: 200V, N-Channel MOSFET

Package: TO-3P type

Manufacturer: Renesas Electronics

Image and Pinouts:

 

Description

This is 200V, 8A, Silicon N-Channel MOSFET.

Features

1. High power gain

2. Excellent frequency response

3. High speed switching

4. Wide area of safe operation

5. Enhancement–mode

6. Good complementary characteristics

7. Equipped with gate protection diodes

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSX = 200 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 8 A

4. Channel dissipation: Pch = 100 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Application:

1. Low frequency power amplifier

2. Complementary pair with 2SJ351, 2SJ352

2SK2221 Datasheet PDF Download

Other data sheets are available within the file: K2221

Part Number: BSH103

Function: 30V, N-channel enhancement mode MOS transistor

Package: SOT-23 Type

Manufacturer: Philips Electronics ( https://www.nxp.com/ )

Image and Pinouts:

 

Description

This is 30V, 0.85A, N-Channel MOSFET.

N-channel enhancement mode MOS transistor in a SOT23 SMD package.

Features

1. Very low threshold

2. High-speed switching

3. No secondary breakdown

4. Direct interface to C-MOS, TTL etc.

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage (DC) : Vds = 30 V

2. gate-source voltage (DC) : VGSS = ± 8 V

3. Drain current (DC) : Id = 0.85 A

4. Total Power Dissipation : Ptot = 0.5 W

 

Applications:

1. Power management

2. DC to DC converters

3. Battery powered applications

4. ‘Glue-logic’; interface between logic blocks and/or periphery

5. General purpose switch.

 

Other data sheets are available within the file: BSH-103

BSH103 Datasheet PDF Download