K4115 Datasheet PDF – 900V, 7A, N-Ch, MOSFET – Toshiba

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K4115, 2SK4115

Function: 900V, 7A, N Channel MOSFET

Package: TO-3P Type

Manufacturer: Toshiba

Image

K4115 mosfet

Description

This is 900V, 7A, Silicon N-Channel MOSFET.

Features

1. Low drain-source ON resistance: RDS (ON)= 1.6 Ω(typ.)

2. High forward transfer admittance: ⎪Yfs⎪= 5.0 S (typ.)

3. Low leakage current: IDSS= 100 μA (max) (VDS= 720 V)

4. Enhancement model: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

 

Pinout

K4115 datasheet pinout

 

Maximum Ratings (Ta =25°C)

1. Drain-source voltage : VDSS = 900 V

2. Drain-gate voltage (RGS =20 kΩ): VDGR = 900 V

3. Gate-source voltage :  VGSS =  ±30 V

4. Drain power dissipation (Tc =25°C)  : PD = 150 W

5. Single pulse avalanche energy : EAS = 491 mJ

6. Avalanche current : IAR = 7 A

7. Repetitive avalanche energy : EAR = 15 mJ

 

Applications:

1. Switching Regulator

 

K4115 Datasheet PDF


 

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2SK2221 MOSFET – 200V, 8A, Transistor ( Datasheet PDF )

Part Number: 2SK2221

Function: 200V, N-Channel MOSFET

Package: TO-3P type

Manufacturer: Renesas Electronics

Image and Pinouts:

2SK2221 datasheet

 

Description

This is 200V, 8A, Silicon N-Channel MOSFET.

Features

1. High power gain

2. Excellent frequency response

3. High speed switching

4. Wide area of safe operation

5. Enhancement–mode

6. Good complementary characteristics

7. Equipped with gate protection diodes

 

components

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSX = 200 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 8 A

4. Channel dissipation: Pch = 100 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Application:

1. Low frequency power amplifier

2. Complementary pair with 2SJ351, 2SJ352

2SK2221 Datasheet PDF Download


2SK2221 pdf

Other data sheets are available within the file: K2221