MOSFET

D452 Datasheet PDF – 25V, 55A, N-ch, MOSFET, Transistor

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: D452, AOD452

Function: 25V, 55A, N-channel, MOSFET

Package: TO-252 Package

Manufacturer: Alpha and Omega Semiconductor

Image:
D452 image

Description

This is 25V, 55A, N-Channel Enhancement Mode Field Effect Transistor.

The D452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.

Features

1. VDS(V) =25V
2. ID= 55 A (VGS= 10V)
3. RDS(ON)< 8.5 mΩ(VGS= 10V)
4. RDS(ON)< 14 mΩ(VGS= 4.5V)
5. 100% UIS tested
6. 100% Rg tested

 

Pinout

D452 Datasheet, AOD452 pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 25 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 55 A

4. Drain power dissipation : PD = 2.5 W

5. Avalanche curren : Iar = 35 A

7. Repetitive avalanche energy : Ear = 61 mJ

8. Channel temperature: Tch = 150 °C

9. Storage temperature: Tstg = -55 to +175 °C

Other data sheets are available within the file: A0D452

D452 Datasheet PDF Download


D452 pdf

 

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83T03GH Datasheet, 83TO3GH – 30V, 75A, Power MOSFET

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Part Number: 83T03GH, 83TO3GH

Function: 30V, 75A, N-channel Enhancement-mode Power MOSFET

Package: TO-262, TO-251 Type

Manufacturer: Advanced Power Electronics Corp

Image and Pinouts:
83T03GH datasheet

Features

1. Low On-resistance
2. Simple Drive Requirement
3. Fast Switching Characteristic
4. RoHS Compliant & Halogen-Free

Description

Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,low on-resistance and cost-effectiveness.

The 83T03GH is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power DC/DC converters. The through-hole TO-251 version (AP83T03GJ-HF-3) is available where a small PCB footprint is required.

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 75 A (Tc = 25°C)
4. Total Power Dissipation: Pd = 60 W
5. Channel temperature: Tch = 175 °C
6. Storage temperature: Tstg = -55 to +175 °C

 

83T03GH Datasheet

83T03GH Datasheet

83T03GH pdf

Other data sheets are available within the file: AP83T03GH, AP83T03J-HF-3, AP83TO3GH