MOSFET

K2225 Datasheet PDF – N-Ch, MOSFET, 1500V, 7A, 2SK2225

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Part Number: K2225, 2SK2225

Function: N-Channel MOSFET

Package: TO-3PFM Type

Manufacturer: Hitachi Semiconductor

Image

k2225-mosfet

Description

This is 1500V, 2A, Silicon N-Channel MOSFET.

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 1500 V

2. Gate to source voltage: VGSS = ±20 V

3. Drain current: ID = 2 A

4. Drain peak current : ID = 7 A

5. Body to drain diode reverse drain current : IDR = 2 A

6. Channel dissipation: Pch = 50 W

 

Pinout

k2225-datasheet-pinout

Features

1. High breakdown voltage (VDSS = 1500 V)

2. High speed switching

3. Low drive current

4. No Secondary Breakdown

5. Suitable for Switching regulator, DC-DC converter

 

Applications:

1. High speed power switching

 

K2225 Datasheet PDF


 

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RJP30H2DPK-M0 Datasheet PDF – 360V, 35A, N-ch, IGBT

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Part Number: RJP30H2DPK-M0

RENESAS Package code : PRSS0004ZH-A

Function: 360V, 35A, Silicon N Channel IGBT

Package: TO-3PSG

Manufacturer: Renesas Electronics

Images:

RJP30H2DPK-M0 datasheet

 

Description

This is 360V, 35A, N-channel IGBT.

Features

1. Trench gate and thin wafer technology (G6H-II series)

2. Low collector to emitter saturation voltage: VCE(sat)= 1.4 V typ

3. High speed switching: tf = 100 ns typ, tf = 180 ns typ

4. Low leak current: ICES= 1 uA max

Pinout
RJP30H2DPK-M0 pinout igbt
Absolute Maximum Ratings

1. Collector to Emitter voltage : VCES = 360 V

2. Gate to Emitter voltage : VGES = ±30 V

3. Collector current : Ic = 35 A

4. Collector peak current : ic(peak) = 250 A

5. Collector dissipation : PC = 60 W

6. Junction temperature : Tj = 150 °C

7. Storage temperature: Tstg = –55 to +150 °C

Applications:

1. High speed power switching

RJP30H2DPK-M0 Datasheet PDF Download


RJP30H2DPK-M0 pdf

Other data sheets are available within the file: RJP30H2DPK, RJP30H2DPK-M0-T2