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Part Number: K3158

Function: 150V, 30A, Silicon N Channel MOSFET

Package: TO-220AB Type

Manufacturer: Renesas Electronics

Image and Pinouts:

K3158 datasheet

Description

This is 150V, 30A, Silicon N Channel MOSFET.

Features

1. Low on-resistance RDS=40mΩ typ.

2. High speed switching

3. 4V gate drive device can be driven from 5V source

components

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 150 V

2. Gate to source voltage: VGSS = ±20 V

3. Drain current: ID = 30 A

4. Drain peak current : ID(pulse) = 120 A

5. Body-drain diode reverse drain current : IDR = 30 A

6. Avalanche current : IAP = 30 A

7. Avalanche energy : EAR = 67 mJ

8. Channel dissipation: Pch = 100 W

9. Channel temperature: Tch = 150 °C

10. Storage temperature: Tstg = –55 to +150 °C

Applications:

1. High Speed Power Switching

Other data sheets are available within the file: 2SK3158, 2SK3158-E

K3158 Datasheet PDF Download

Description

The D9N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), C issand Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 400 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 8 A (Tc = 25°C)

4. Drain Power Dissipation: Pd = 125 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

MOSFET

K3158 Datasheet PDF – 150V, 30A, N-Channel MOSFET

Description

Features

K3158 Datasheet PDF Download

D9N40 Datasheet – 400V, 8A, N-Ch MOSFET

Description

D9N40 Datasheet

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