K3911 Datasheet PDF – N-Ch, 600V, 20A, MOSFET – Toshiba

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K3911, 2SK3911

Function: 600V, 20A, N-Channel MOSFET

Package: TO-3P, SC-65 Type

Manufacturer: Toshiba

Image

k3911-mosfet-toshiba

 

Description

This is Silicon N Channel MOS Type Field Effect Transistor.

Features

1. Small gate charge: Qg = 60 nC (typ.)

2. Low drain-source ON resistance: RDS (ON) = 0.22Ω (typ.)

3. High forward transfer admittance: |Yfs| = 11 S (typ.)

4. Low leakage current: IDSS = 500 μA (VDS = 600 V)

5. Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

 

Pinout

k3911-datasheet-pinout

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage: VDSS=600 V

2. Drain-gate voltage (RGS = 20 kΩ) : VDGR=600 V

3. Gate-source voltage: VGSS=±30 V

4. Drain power dissipation (Tc = 25°C) : PD=150 W

5. Single pulse avalanche energy : EAS=792 mJ

6. Avalanche current : IAR=20 A

7. Repetitive avalanche energy : EAR=15 mJ

Applications:

1. Switching Regulator

K3911 Datasheet


 

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40N03GP Datasheet PDF – 30V, 40A, Power MOSFET – APEC

Part Number: AP40N03GP, AP40N03GP-HF-3

Marking : 40N03GP

Function: 30V, 40A, Power MOSFET

Package: TO-220(P) Type

Manufacturer: Advanced Power Electronics Corp ( www.a-powerusa.com )

Image

40N03GP Power MOSFET

Description

This is 30V, 40A, N-channel Enhancement-mode Power MOSFET.

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The 40N03GP is in the TO-220 through-hole package which is used in commercial appplications where a low PCB footprint or an attached heatsink is required. This device is well suited for low voltage applications such as DC/DC converters and high current DC switches.

Pinout:

40N03GP pinout datasheet

 

Features

1. Simple Drive Requirement
2. Low Gate Charge
3. Fast Switching Performance
4. RoHS-compliant, halogen-free

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 40 A

4. Total Power Dissipation: Pd = 50 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

40N03GP Datasheet


 

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