K3918 Datasheet – 25V, 48A, N-Ch, Power MOSFET

Posted on July 4, 2022October 7, 2022 by pinout

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K3918

Function: 48A, 25V, Switching N-Channel Power MOSFET

Package: TO-251, TO-252 Type

Manufacturer: NEC, Renesas Electronics

Image

Description

The 2SK3918, K3918 is N-channel MOS FET device thatfeatures a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

Package

K3918 image, nec

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to Source Voltage (VGS = 0 V) : VDSS = 25 V
2. Gate to Source Voltage (VDS = 0 V) : VGSS = ±20 V
3. Drain Current (DC) (TC = 25°C) : ID(DC) = ±48 A
4. Drain Current (pulse) : ID(pulse) = ±192 A
5. Total Power Dissipation (TC = 25°C) : PT1 = 29 W
6. Total Power Dissipation : PT2 = 1.0 W
7. Channel Temperature : Tch = 150 °C
8. Storage Temperature : Tstg = 55 to +150 °C
9. Single Avalanche Current : IAS = 22 A
10. Single Avalanche Energy : EAS = 48 mJ

Pinout for K3918

Features

1. Low on-state resistance : RDS(on)1 = 7.5 mΩ MAX. (VGS= 10 V, ID= 24 A)
2. Low Ciss : Ciss= 1300 pF TYP.
3. 5 V drive available

Other data sheets are available within the file: 2SK3918, 2SK3918-ZK, K3918-ZK

K3918 Datasheet PDF

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BUZ11 Datasheet PDF – 50V, 30A, N-Ch, MOSFET, Transistor

Posted on July 4, 2022November 6, 2022 by pinout

Part Number: BUZ11

Function: 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET

Package: TO-220AB Type

Manufacturer: Fairchild Semiconductor

Image and Pinouts:

BUZ11 datasheet

Description

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.

Features

1. 30A, 50V
2. rDS(ON)= 0.040Ω
3. SOA is Power Dissipation Limited
4. Nanosecond Switching Speeds
5. Linear Transfer Characteristics
6. High Input Impedance
7. Majority Carrier Device
8. Related Literature
– TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Absolute Maximum Ratings

1. Drain to Source Breakdown Voltage : VDS = 50 V
2. Drain to Gate Voltage (RGS= 20kΩ): VDGR = 50 V
3. Continuous Drain Current TC = 30’C : ID = 30 A
4. Pulsed Drain Current : IDM = 120 A
5. Gate to Source Voltage : VGS = ±20 V
6. Maximum Power Dissipation : PD = 75 W

Other data sheets are available within the file: BUZ11_NR4941

BUZ11 Datasheet PDF Download