Part Number: IXFH26N60Q

Function: HiPerFET Power MOSFET ( Vdss = 600V, Id25 = 26A, Rds(on) = 0.25 Ohm )

Package: TO-247 Type

Manufacturer: IXYS

Image :

Description

This is N-Channel Enhancement Mode Power MOSFET. Avalanche Rated, High dv/dt, Low Qg.

Features

1. Low gate charge
2. International standard packages

3. Epoxy meet UL 94 V-0, flammability classification
4. Low RDS (on) HDMOSTM process
5. Rugged polysilicon gate cell structure
6. Avalanche energy and current rated
7. Fast intrinsic Rectifier

Pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 26 A
4. Drain Power Dissipation: Pd = 350 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C

Advantages :

1. Easy to mount
2. Space savings
3. High power density

IXFH26N60Q Datasheet

 

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Part Number: 2SK1572

Function: 600V, 3A, N-Channel MOSFET

Package: TO-220FM Type

Manufacturer: Hitachi -> Renesas Electronics

Image and Pinouts:

Description

This is 600V, 3A, Silicon N-Channel MOSFET.

Features

1. Low on-resistance

2. High speed switching

3. Low drive current

4. No secondary breakdown

5. Suitable for switching regulator and DC-DC converter

Absolute Maximum Ratings :

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ±30 V

3. Drain current: ID = 3 A

4. Drain peak current : ID(pulse)*1 = 6 A

5. Body to drain diode reverse drain current : IDR = 3 A

6. Channel dissipation: Pch*2 = 25 W

 

Application

1. High speed power switching

Other data sheets are available within the file: K1572

2SK1572 Datasheet PDF Download