Part Number: BUZ93

Function: 3.6A, 600V, Transistor

Package: TO-220AB

Manufacturer: Siemens AG

Image and Pinouts:

Description

This is 600V, 3.6A, SIPMOS Power Transistor.

 

Features

1. N channel MOSFET

2. Enhancement mode

3. Avalanche-rated.

Absolute maximum ratings ( Tc=25°C )

1. Continuous drain current : Id = 3.6 A

2. Pulsed drain current : Id puls = 14.5 A

3. Avalanche current,limited by Tjmax : IAR = 3.3 A

4. Avalanche energy,periodic limited by Tjmax : EAR = 6 mJ

5. Gate source voltage : VGS = ± 20 V

6. Power dissipation : Ptot = 80 W

Other data sheets are available within the file: C67078-S1343-A2

BUZ93 Datasheet PDF Download

Related articles across the web

Part Number: K2373

Function: 30V, 0.2A, N-Channel MOSFET

Package: MPAK Type

Manufacturer: Hitachi ( Renesas Electronics )

Image and Pinouts:

 

Description

This is 30V, 0.2A, Silicon N-Channel MOSFET.

Features

1.  Low on-resistance
2.  Small package
3.  Low drive current
4.  4 V gate drive device can be driven from 5 V source.
5.  Suitable for low signal load switch

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V
2. Gate to source voltage: VGSS = ±20 V
3. Drain current: ID : 0.2 A
4. Drain peak current : ID(pulse) = 0.4 A
5. Body to drain diode reverse drain current : IDR = 0.2 A
6. Channel dissipation: Pch = 150 mW

Application:

1. Low frequency power switching

Other data sheets are available within the file: 2SK2373

K2373 Datasheet PDF Download