Part Number: B31N20D, IRFB31N20D, IRFS31N20D

Function: SMPS MOSFET ( HEXFET Power MOSFET )

Package: TO-220AB, D2Pak, TO-262 Type

Manufacturer: IR ( International Rectifier )

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Description

This is 200V, 31A, SMPS MOSFET. (Metal-Oxide-Semiconductor Field-Effect Transistor)

Features

1. Low Gate-to-Drain Charge to Reduce Switching Losses

2. Fully Characterized Capacitance Including Effective COSS to Simplify Design

3. Fully Characterized Avalanche Voltage and Current

 

Pinouts:

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 200 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 31 A (Tc = 25°C)

4. Drain Power Dissipation: Pd = 3.1 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. High frequency DC-DC converters

 

Typical SMPS Topologies

Telecom 48V Input Forward Converters

 

 

B31N20D Datasheet PDF

 

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Part Number: 2SK350, 2SK349

Function: 450V, 10A, N-Channel MOSFET

Package: TO-3P Pin Type

Manufacturer: Hitachi Semiconductor

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Description

The 2SK350 is 450V, 10A, Silicon N-Channel MOSFET.

Features

1. Drain Current –ID=10A@ TC=25℃

2. Drain Source Voltage : VDSS= 450V(Min)

3. Fast Switching Speed

4. Minimum Lot-to-Lot variations for robust device performance and reliable operation

Absolute Maximum Ratings (Ta=25°C )

1. Drain-Source Voltage (VGS=0) : VDSS = 450 V

2. Gate-Source Voltage : VGS = ±20 V

3. Drain Current-continuous@ TC=25°C : ID = 10 A

4. Total Dissipation@TC=25°C : Ptot = 100 W

5. Junction Temperature: Tj = 150°C

6.. Storage Temperature: Tsg = -55 ~ +150°C

 

Pinout

Applications:

1. High speed power Switching

 

2SK350 Datasheet PDF

 

 

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