Part Number: IRFP064N

Function: HEXFET MOSFET ( 55V, 110A )

Package: TO-247AC type

Manufacturer:  IRF, Infineon ( https://www.infineon.com/  )

Image

Description

This is 55V, 110A, HEXFET Power MOSFET.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Pinout

Features

1. Advanced Process Technology

2. Ultra Low On-Resistance

3. Dynamic dv/dt Rating

4. 175°C Operating Temperature

5. Fast Switching

6. Fully Avalanche Rated

Absolute maximum ratings ( Ta=25°C )

0. Drain-to-Source Breakdown Voltage : Vdss = 55 V

1. Continuous Drain Current, Id = 110 A

2. Power Dissipation: Pd = 200 W

3. Gate-to-Source Voltage : Vgs = ± 20 V

4. Single Pulse Avalanche Energy : Eas = 480 mJ

5. Avalanche Current : Iar = 59 A

Other data sheets are available within the file: IRFP064

IRFP064N Datasheet PDF Download

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Part Number: SP8611

Function: 20V, 8A, N-Channel MOSFET

Package: S mini 8 type

Manufacturer: http://www.samhop.com.tw/

Image and Pinouts:

Description

The SP8611 is Dual N-Channel Enhancement Mode Field Effect Transistor.

Features

1. Super high dense cell design for low RDS(ON).
2. Rugged and reliable.
3. Suface Mount Package.
4. ESD Protected.

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 20 V
2. Gate to source voltage: VGSS = ± 12 V
3. Drain current: ID = 8 A
4. Drain power dissipation : PD = 1.32 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file: SP-8611

SP8611 Datasheet PDF Download

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• 14D471K Datasheet – 14Pie, 470V, Varistor