Part Number: 2SK2412

Function: 60V, 20A, N-Channel MOS FIELD EFFECT TRANSISTOR

Package: TO-220 Type

Manufacturer: NEC ( Renesas Technology )

Image and Pinouts:

Description

The 2SK2412 is N-Channel MOS Field Effect Transistor designed for high speed switching applications.

In an N-channel MOSFET, the source and drain terminals are connected to an N-type semiconductor material, while the gate terminal is insulated from the channel by a thin oxide layer.

Features

1. Low On-Resistance :

(1) RDS(on)1= 70 mΩMAX. (@ VGS= 10 V, ID= 10 A)

(2) RDS(on)2= 95 mΩMAX. (@ VGS= 4 V, ID= 10 A)

2. Low CissCiss= 860 pF TYP.

3. Built-in G-S Gate Protection Diodes

4. High Avalanche Capability Ratings

Absolute maximum ratings

1. Drain to Source Voltage : VDSS = 60 V

2. Gate to Source Voltage : VGSS = ±20 V

3. Drain Current (DC) : ID(DC) = ±20 A

4. Drain Current (pulse) :  ID(pulse) = ±80 A

5. Total Power Dissipation (Tc = 25 °C) : PT1 = 30 W

6. Total Power Dissipation (TA = 25 °C) : PT2 = 2.0 W

7. Single Avalanche Current : IAS = 20 A

8. Single Avalanche Energy : EAS = 22.5 mJ

 

Other data sheets are available within the file: K2412, NEC2412

2SK2412 Datasheet PDF Download