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Features

1. Low on-resistance : RDS(on)= 0.040Ω typ.

2. 4V gate drive devices.

3. High speed switching

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 15 A

4. Channel dissipation: Pch = 25 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. High Speed Power Switching

Other data sheets are available within the file: 2SK2933

Part Number: W20NM50, STW20NM50

Function: N-CHANNEL 500V – 0.20Ω – 20A MDmesh Power MOSFET

Package : TO-247 Type

Manufacturer: STMicroelectronics

Image

Description

This is 550V, 20A, N-Channel MOSFET.

The MDmesh is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

Pinout

Features

1. TYPICAL RDS(on) = 0.20Ω
2. HIGH dv/dt AND AVALANCHE CAPABILITIES
3. 100% AVALANCHE TESTED
4. LOW INPUT CAPACITANCE AND GATE CHARGE
5. LOW GATE INPUT RESISTANCE
6. TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS

Applications:

The MDmesh family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

MOSFET

K2933 Datasheet PDF – MOSFET, 60V, 15A, N-Ch, Transistor

Description

Features

K2933 Datasheet PDF Download

W20NM50 Datasheet PDF – 500V, 20A, N-Ch, MOSFET – ST

Description

W20NM50 Datasheet

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