Part Number: IRFB9N60A

Function: HEXFET Power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 9.2A

Package: TO-220AB Type

Manufacturer: International Rectifier, ( https://www.infineon.com/ )

Image and Pinouts:

 

Description

This is 600V, 9.2A, HEXFET Power MOSFET.

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on resistance and cost-effectiveness.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

 

Features

1. Dynamic dv/dt Rating
2. Repetitive Avalanche Rated
3. Fast Switching
4. Ease of Paraleling
5. Simple Drive Requirements

Other data sheets are available within the file: FB-9N60A, FB9N60A

IRFB9N60A Datasheet PDF Download

Part Number: IPB65R125C7

Function: 650V, 18A, CoolMOS C7 Power Transistor

Package: D2PAK Type

Manufacturer: Infineon Technologies

Image and Pinouts:

 

Description

This is 650V, CoolMOS C7 Power Transistor.

CoolMOS is a revolutionary technology for high voltage power MOSFET, designed according to the superjuntion principle and pioneered by infineon Technologies.

 

Summary of

Features

1. 650V voltage
2. Revolutionary Best-in-Class RDS(on)/package
3. Reduced energy stored in output capacitance (Eoss)
4. Lower gate charge Qg
5. Space saving through use of smaller packages or reduction of parts

 

Applications:

1. PFC stages and hard switching PWM stages for e.g. Computing, Server, Telecom,

UPS and Solar.

Other data sheets are available within the file: 65C7125, IPB65R125C7ATMA1

 

IPB65R125C7 Datasheet PDF Download

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