MOSFET

KP11N60 Transistor – 600V, 11A, Datasheet PDF – MOSFET

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The KP11N60 is Super Junction MOSFET. This is kind of a transistor.

Part Number: KP11N60

Function: 600V, 11A, N-Channel MOSFET

Package: TO-220IS Type

Manufacturer: KEC

KP11N60 transistor

Description

This is 600V, 11A, N-CHANNEL MOS FIELD EFFECT TRANSISTOR.

This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.

Pinouts:
KP11N60 datasheet

 

Features

1. VDSS=600V, ID=11A

2. Drain-Source ON Resistance : RDS(ON)(Max) = 0.38Ω@VGS=10V

3.  Qg(typ.)= 20nC

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID =  11 A

4. Drain power dissipation : PD = 34.7 W

5. Maximum Junction temperature : Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Other data sheets are available within the file: KP11N60F, KP11N60D

KP11N60 Datasheet PDF Download

Similar features and reference parts


KP11N60 pdf

 

CMT4410 Datasheet PDF – 30V, N-Channel MOSFET

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Part Number: CMT4410

Function: N-Channel 30V MOSFET

Package:  8-Pin SOP

Manufacturer: Champion Microelectronic

Pinouts:

CMT4410 datasheet

 

Description

This is 30V, N-Channel MOSFET.

Featues :

1. Low Qg
2. Low on-resistance
3. Excellent resistance to damage from static electricity
4. Silicon N-channel MOSFET

Absolute maximum ratings

1. Drain-to-Source Voltage : VDS = 30 V
2. Drain to Current : ID = 10 A
3. Reverse Drain to Current : IR = 10 A
4. Source Current (Body Diode) : IS = 1.3 A
5. Gate-to-Source Voltage : VGS = ±20 V
6. Total Power Dissipation : PD = 2.0 W

Other data sheets are available within the file: 4410

CMT4410 Datasheet PDF Download


CMT4410 pdf