Part Number: 11N60S5

Function: 600V, Cool MOS Power Transistor  / Ultra low gate charge

Package: TO-262, TO-263, TO-220 Type

Manufacturer: Infineon Technologies

Image and Pinouts:

 

Description

This is 600V, Cool MOS Power Transistor.

 

Features

1. New revolutionary high voltage technology

2. Ultra low gate charge

3. Periodic avalanche rated

4. Extreme dv/dt rated

5. Ultra low effective capacitances

6. Improved transconductance

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 11 A (Tc = 25°C)

4. Power dissipation : Ptot = 125 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Other data sheets are available within the file:

Q67040-S4198, Q67040-S4338, SPI11N60S5, SPP11N60S5, SPB11N60S5

 

11N60S5 Datasheet PDF Download

Part Number: FQPF20N06L

Function: N-Channel QFET MOSFET 60V, 15.7A, 55 mΩ

Package: TO-220F

Manufacturer: Fairchild Semiconductor

Image and Pinouts:

 

Description

The FQPF20N06L is 60V, 15.7A, N-Channel MOSFET, Transistor.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

Features

1. 15.7A, 60V, RDS(on) = 0.055Ω @VGS = 10 V

2. Low gate charge ( typical 9.5 nC)

3. Low Crss ( typical 35 pF)

4. Fast switching

5. 100% avalanche tested

6. Improved dv/dt capability

7. 175°C maximum junction temperature rating

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 15.7 A (Tc = 25°C)

4. Power Dissipation: Pd = 30 W (Tc = 25°C)

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

Other data sheets are available within the file: FQPF-20N06L, FQPF20N06, 20N06

 

FQPF20N06L Datasheet PDF Download