D5N50 Datasheet – 500V, 5A, N-Channel MOSFET ( PDF )

Part Number: D5N50, AOD5N50

Function: 500V, 5A, N-Channel MOSFET

Package: TO-252 Type

Manufacturer: Alpha and Omega Semiconductor ( http://www.aosmd.com/ )

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D5N50 datasheet mosfet

Description

The D5N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs.

Pinout

D5N50 pinout

Product Summary :

1. 600V@150℃
2. ID (at VGS=10V) 5A
3. RDS(ON) (at VGS=10V) < 1.6 Ω

Absolute Maximum Ratings

1. Drain-Source Voltage : Vds = 500V

2. Gate-Source Voltage : Vgs = ± 30V

3. Pulsed Drain Current : Idm = 17 A

4. Avalanche Current : Iar = 2.8 A

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Official Homepage: http://www.aosmd.com/products/mosfets/n-channel/AOD5N50

D5N50 Datasheet


 

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9D5N20P Datasheet – 200V, N-ch MOSFET – KEC

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: 9D5N20P, KHB9D5N20P

Function: N Channel MOS Field Effect Transistor

Package: TO-220AB Type

Manufacturer: KEC

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9D5N20P image

Decription

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switch mode power supplies.

Features

1. VDSS=200V, ID=9.5A

2. Drain-Source ON Resistance : R DS(ON)=400mΩ@VGS= 10V

3. Qg(typ.)=18.5nC

Pinout

9D5N20P datasheet

Absolute Maximum Ratings (Tc = 25°C)

1. Drain to source voltage: VDSS = 200 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 9.5 A
4. Drain Power Dissipation: Pd = 87 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C

9D5N20P Datasheet


 

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