See the preview image and the PDF file for more information.

Part Number: 11N60E

Function: 11A, 600V, N-Channel MOSFET.

Package: TO-220F(SLS) Type

Manufacturer: Fuji

This is one of the types of MOSFETs and is a kind of transistor.

Images:

Description

This is N-Channel Silicon Power MOSFET.

Features

1. Maintains both low power loss and low noise
2. Lower RDS(on) characteristic
3. More controllable switching dv/dt by gate resistance
4. Smaller VGS ringing waveform during switching
5. Narrow band of the gate threshold voltage (3.0±0.5V)
6. High avalanche durability

11N60E Pinout

Applications

1. Switching regulators
2. UPS (Uninterruptible Power Supply)
3. DC-DC converters

Absolute Maximum Ratings at Tc=25°C

1. Drain-Source Voltage : Vds = 600 V
2. Continuous Drain Current : Id = 11 A
3. Maximum Power Dissipation: Pd = 65 W
4. Operating Temperature range : Tch = 150°C
5. Storage Temperature range :  Tstg = -55 to +150°C

Other data sheets are available within the file: FMV11N60E

11N60E Datasheet PDF Download

Part Number: 2SK1492

Function: 250V, 35A, SWITCHING N-CHANNEL POWER MOSFET

Package: TO-3P Pin Type

Manufacturer: NEC, Renesas Electronics

Image and Pinouts:

 

Description

The 2SK1492 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

Features

1. Low on-state resistance RDS(on)= 0.1 Ω MAX. (VGS= 10 V, ID= 18 A)
2. Low input capacitance Ciss= 3000 pF TYP.
3. Built-in G-S gate protection diodes
4. High avalanche capability ratings

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to Source Voltage (VGS = 0 V) : VDSS = 250 V
2. Gate to Source Voltage (VDS = 0 V) : VGSS = ±30 V
3. Drain Current (DC) : ID(DC) = ±35 A
4. Drain Current (pulse) : ID(pulse) = ±140 A
5. Total Power Dissipation (TC = 25°C) : PT = 140 W

Other data sheets are available within the file: K1492

2SK1492 Datasheet