Part Number: SVD5N60F

Function : 5A, 600V N-CHANNEL MOSFET

Package: TO-220F-3L, TO-220-3L type

Manufacturer: Silan Microelectronics

Image

Description

 

SVD5N60T / SVD5N60F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.

Pinout

 

Features

1. 5A,600V,RDS(on)（typ）=1.7Ω@VGS=10V
2. Low gate charge
3. Low Crss
4. Fast switching
5. Improved dv/dt capability

SVD5N60F Datasheet

 

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Part Number: 2SJ189

Function: P-channel Silicon MOSFET

Package: TP, TP-FA Type

Manufacturer: SANYO (Panasonic)

Image and Pinouts:

 

Description

This is -30V, P-Channel MOSFET.

Features

1. Low ON resistance.

2. Low-voltage drive.

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = – 30 V

2. Gate to source voltage: VGSS = ± 15 V

3. Drain current: ID = – 4 A

4. Allowable Power Dissipation: Pd = 30 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

 

Applications:

1. Ultrahigh-Speed Switching

Other data sheets are available within the file: J189

2SJ189 Datasheet PDF Download