2SK2611 Datasheet PDF – 900V, 9A, MOSFET, Transistor

Part Number: 2SK2611

Function: 900V, 9A, Silicon N-Channel MOSFET

Package: TO-3P Type

Manufacturer: Toshiba

Image

2SK2611 datasheet pdf

Description

The 2SK2611 is a high-voltage 900V N-channel enhancement-mode MOSFET designed for demanding power switching applications, typically available in a TO-3P or TO-247 package. It offers low on-resistance, high forward transfer admittance, and low leakage current, ensuring efficient operation in high-voltage environments. This device is widely used in DC-DC converters, motor drives, and high-power switching circuits.

Features

  • Low drain-source on-resistance with RDS(on)=1.2Ω (typ.)
  • High forward transfer admittance |Yfs|=7.0S (typ.)
  • Low leakage current with IDSS=100µA (max)
  • High voltage capability up to 900V
  • Enhancement-mode operation with Vth=2.0–4.0V
  • Suitable for high-power and high-voltage switching

Pinout

2SK2611 datasheet

Absolute Maximum Ratings (Tc = 25 °C)

Parameter Symbol Value Unit
Drain-Source Voltage VDSS 900 V
Gate-Source Voltage VGSS ±30 V
Drain Current ID 9 A
Power Dissipation Pd 150 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg -55 to 150 °C

Design Notes

  • Ensure sufficient gate drive voltage for full enhancement and low RDS(on)
  • Use proper heat sinking due to high power dissipation capability
  • Implement snubber or clamp circuits for inductive switching loads
  • Gate resistor recommended to control switching speed and reduce EMI
  • Verify safe operating area (SOA) during transient conditions

Typical Circuit Usage

  • High-voltage DC-DC converter switching stages
  • Motor drive and actuator control circuits
  • Relay driver circuits in industrial systems
  • Switch-mode power supplies (SMPS)
  • Power switching in high-voltage applications

How to Choose This Part

  • Select for high-voltage applications up to 900V
  • Suitable for moderate-to-high current switching up to 9A
  • Ensure RDS(on) meets efficiency requirements
  • Confirm thermal management strategy for high-power use
  • Use when robust switching and reliability are critical

Applications

  • DC-DC converters
  • Relay drive circuits
  • Motor drive systems
  • Industrial power supplies
  • High-voltage switching applications

Alternative / Equivalent Products

  • 2SK2610 (similar high-voltage MOSFET)
  • IRFPG50 (high-voltage MOSFET alternative)
  • STW9NK90Z (STMicroelectronics 900V MOSFET)
  • FQA9N90 (ON Semiconductor equivalent)
  • 2SK3563 (comparable N-channel MOSFET)

2SK2611 Datasheet PDF Download


2SK2611 pdf

Other data sheets are available within the file: K2611

AO3402L Datasheet PDF – 30V, 4A, N-Ch, MOSFET

Part Number: AO3402L

Function: 30V, N-Channel MOSFET

Package: SOT-23 Type

Manufacturer: Alpha and Omega Semiconductor

Image and Pinouts:

AO3402L datasheet

 

Description

The AO3402L uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. This is a logic-level N-channel MOSFET in a compact SOT-23 package, designed for low-voltage switching applications with a 30V drain-source rating. It utilizes advanced trench technology to achieve low RDS(ON), fast switching performance, and efficient operation even at low gate drive voltages. This device is widely used in load switching, DC-DC converters, and PWM-controlled power circuits.

Features

  • Low RDS(ON) for reduced conduction losses
  • Logic-level gate drive compatible down to 2.5V
  • Advanced trench MOSFET technology
  • Fast switching capability suitable for PWM applications
  • Compact SOT-23 package for space-constrained designs
  • Low gate charge for efficient high-speed operation

How to Choose This Part

  • Select for low-voltage applications requiring efficient switching
  • Ideal when logic-level gate drive (2.5V–5V) is available
  • Suitable for compact designs with limited PCB space
  • Evaluate RDS(ON) at intended gate voltage for performance
  • Check thermal constraints under continuous load conditions

Applications

  • Portable consumer electronics
  • Battery management systems
  • LED drivers and lighting control
  • Small motor control circuits
  • Embedded system power switching

Alternative / Equivalent Products

  • SI2302 N-channel MOSFET in SOT-23 package
  • IRLML6344 logic-level MOSFET
  • 2N7002 general-purpose MOSFET
  • AO3400A enhanced performance MOSFET
  • FDN337N low RDS(ON) MOSFET

Other data sheets are available within the file: AO3402, A03402, A03402L

AO3402L Datasheet PDF Download


AO3402L pdf