FQP12N60C Datasheet – 600V, 12A, N-Ch, QFET MOSFET

Part Number: FQP12N60C

Function : 600 V, 12 A, 650 mΩ, N-Channel QFET MOSFET

Package: TO 220 Type

Manufacturer: Fairchild, ONSemiconductor

Image

FQP12N60C QFET MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

Pinout

FQP12N60C pinout

Features

• 12 A, 600 V, RDS(on) = 650 mΩ (Max.) @ VGS = 10 V, ID = 6 A
• Low Gate Charge (Typ. 48 nC)
• Low Crss (Typ. 21 pF)
• 100% Avalanche Tested

Absolute Maximum Ratings

1. Drain-Source Voltage : VDSS  = 600 V
2. Drain Current – Continuous (TC = 25°C) : ID = 12A
3. Drain Current – Pulsed : IDM = 48 A
4. Gate-Source voltage: VGSS= ± 30 V
5. Single Pulsed Avalanche Energy : EAS = 870 mJ
6. Avalanche Current : IAR = 12 A
7. Repetitive Avalanche Energy : EAR = 22.5 mJ
8. Peak Diode Recovery dv/dt : dv/dt = 4.5 V/ns
9. Power Dissipation (TC = 25°C) : PD = 225 W

 

FQP12N60C Datasheet


 

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K3141 Datasheet PDF – 30V, 75A, N-Ch, MOSFET, 2SK3141

Part Number: K3141, 2SK3141

Function: 75A, 30V, Silicon N Channel MOSFET

Package: TO-220AB Type

Manufacturer: Hitachi ( Renesas Electronics )

Image and Pinouts:

K3141 datasheet

Description

This is 30V, Silicon N Channel MOSFET.

Features

1. Low on-resistance  RDS(on)= 4 mΩ typ.
2. Low drive current
3. 4 V gate drive device can be driven from 5 V source

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V
2. Gate to source voltage: VGSS = ±20 V
3. Drain current: ID = 75 A
4. Drain peak current : ID(pulse) = 300 A
5. Body-drain diode reverse drain current : IDR = 75 A
6. Avalanche current : IAP = 35 A
7. Avalanche energy : EAR = 122 mJ
8. Channel dissipation: Pch = 100 W
9. Channel temperature: Tch = 150 °C
10. Storage temperature: Tstg = -55 to +150 °C

Applications

1. High Speed Power Switching

Other data sheets are available within the file: 2SK3141

K3141 Datasheet PDF Download


K3141 pdf