Part Number: BUZ74

Function: SIPMOS Power Transistor

Package: TO-220AB Type

Manufacturer: Siemens AG

Image and Pinouts:

Description

This is 500V, 2.4A, N-Channel MOSFET. (Metal-Oxide-Semiconductor Field-Effect Transistor)

The BUZ74 has a maximum drain-source voltage of 500V and a maximum drain current of 2.4A,
making it suitable for high voltage, high current applications.

Features

1. N channel MOSFET

2. Enhancement mode

3. Avalanche-rated

Maximum Ratings :

0. Drain- source breakdown voltage : Vdss = 500 V

1. Continuous drain current TC = 30 °C : ID = 2.4 A

2. Pulsed drain current TC = 25 °C : IDpuls = 9.5 A

3. Avalanche current,limited by Tjmax : IAR = 2.4 A

4. Avalanche energy,periodic limited by Tjmax : EAR = 5 mJ

5. Gate source voltage : VGS = ± 20 V

6. Power dissipation TC = 25 °C : Ptot = 40 W

Other data sheets are available within the file: C67078-S1314-A2

BUZ74 Datasheet PDF Download

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Part Number: FQPF8N60C

Function: N-Channel QFET MOSFET, 600V, 7.5A, 1.2 Ω

Package: TO-220, TO-220F

Manufacturer: Fairchild Semiconductor

Image:

Description

The FQPF8N60C is 600V, 7.5A, N-Channel QFET MOSFET.

These N-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Pinout

Features

1. 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V
2. Low gate charge ( typical 28 nC)
3. Low Crss ( typical 12 pF)
4. Fast switching
5. 100% avalanche tested
6. Improved dv/dt capability

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 7.5 A (Tc = 25°C)
4. Power Dissipation: Pd = 48 W (Tc = 25°C)
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file: FQP8N60C

FQPF8N60C Datasheet PDF Download