MOSFET

K1358 Datasheet PDF – 900V, 9A, N-Ch, MOSFET ( PDF )

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Part Number: K1358

Function: 9A, 900V, N-Channel MOSFET

Package: TO-3P, SC-65 Type

Manufacturer: Toshiba

Images :

K1358 datasheet

Description

This is N-Channel Field Effect Transistor.

Features

1. Low Drain-Source ON Resistance : RDS(ON) = 1.1Ω(Typ.)
2. High Forward Transfer Admittance : | Yfs | = 4.0S (Typ.)
3.  Low Leakage Current : IDSS= 300µA (Max.) @ VDS= 720V
4. Enhancement-Mode : Vth= 1.5 ~ 3.5V @ VDS= 10V, ID= 1mA

Pinouts:

components

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-Source Voltage : VDSS = 900 V
2. Drain-Gate Voltage (RGS = 20kΩ ) : VDGR = 900 V
3. Gate-Source Voltage : VGSS = ± 30 V
4. Drain Current (DC) : ID = 9 A
5. Drain Power Dissipation(Tc = 25°C): PD = 150 W
6. Channel Temperature : T ch = 150°C
7. Storage Temperature Range : Tstg = -55 ~ 150°C

components

Applications

1. High Speed, High Current DC-DC Converter
2. Relay Drive and Motor Drive

Other data sheets are available within the file: 2SK1358

K1358 Datasheet PDF Download


K1358 pdf

MDF11N65B Datasheet – 650V, N-Ch, MOSFET – MagnaChip

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: MDF11N65B

Function:  N-Channel MOSFET, 650V, 12A, 0.65Ω

Package: TO-220F Type

Manufacturer: MagnaChip Semiconductor ( http://www.magnachip.com/  )

Image :
 MDF11N65B image 

Description

The MDF11N65B is 650V, 12A, N-channel MOSFET.

These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low on state resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications.

Features

1. VDS= 650V
2. ID= 12A   @ VGS= 10V
3. RDS(ON)≤ 0.65Ω  @ VGS= 10V

MDF11N65B Pinout

MDF11N65B datasheet pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 650 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 12 A

4. Drain power dissipation : PD = 49.6 W

5. Single pulse avalanche energy : Eas = 750 mJ

6. Repetitive avalanche energy : Ear = 18.1 mJ

7. Channel temperature: Tch = -55 to +150 °C

8. Storage temperature: Tstg = -55 to +150 °C

 

MDF11N65B Datasheet PDF


 

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