Part Number: IRFP450

Function: Vdss=500V, HEXFET Power MOSFET

Package:  TO-247AC Type

Manufacturer: International Rectifier

Image

Description

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Pinout

 

Features

1. Dynamic dv/dt Rating
2. Repetitive Avalanche Rated
3. Isolated Central Mounting Hole
4. Fast Switching
5. Ease of Paralleling
6. Simple Drive Requirements

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IRFP450 Datasheet PDF Download

 

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• General-Purpose Operational Amplifier

Part Number: 2SK1336

Function: 0.3A, 60V, Silicon N-Channel MOSFET

Package: TO-92 Type

Manufacturer: Hitachi ( Renesas Electronics )

Image and Pinouts:

Description

This is 60V, 0.3A, N-Ch, MOSFET.

Features

1. Low on-resistance
2. High speed switching
3. Low drive current
4. 4 V gate drive device – Can be driven from 5 V source
5. Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V
2. Gate to source voltage: VGSS = ±20 V
3. Drain current: ID = 0.3 A
4. Drain peak current : ID(pulse) = 1.2 A
5. Body to drain diode reverse drain current : IDR = 0.3 A
6. Channel dissipation: Pch = 400 mW
7. Channel temperature: Tch = 150 °C
8. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file: K1336

2SK1336 Datasheet PDF Download