MOSFET archives - Page 437 of 1244

Description

This leaded device is available in high-reliability equivalents for high-reliability applications.
Microsemi also offers numerous other products to meet higher and lower power voltage
regulation applications.

Features

1. Surface mount equivalent to JEDEC registered 2N5116.

2. Screening in reference to MIL-PRF-19500 is available.

3. RoHS compliant versions available(commercial grade only).

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V
2. Gate to source voltage: VGSS = ± 30 V
3. Channel temperature: Tch = 200 °C
4. Storage temperature: Tstg = -65 to +200 °C

Other data sheets are available within the file: 2N5114, 2N5116, MQ2N5114, MQ2N5115

Part Number: IPA60R380C6

Function: 600V, CoolMOS C6 Power Transistor

Package: TO-220 Type

Manufacturer: Infineon Technologies

Image and Pinouts:

IPA60R380C6 datasheet

Description

This is 600V, N-Channel MOSFET.

CoolMOS is a revolutionary tecnoloty for high voltage power MOSFET, designed according to the superjunction principle and pioneered by infineon technologies.

Features

1. Extremely low losses due to very low FOM Rdson Qg and Eoss

2. Very high commutation ruggedness

3. Easy to use/drive

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 10.6 A (Tc = 25°C)

4. Total Dissipation: Pd = 31 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. PFC stages, hard switching PWM stages

2. Adapter, LCD & PDP TV, Lighting, Server, UPS.

Other data sheets are available within the file:

6R380C6, IPB60R380C6, IPD60R380C6, IPI60R380C6

MOSFET

2N5115 Datasheet – P-Ch, MOSFET, Transistor ( PDF )

Description

2N5115 Datasheet PDF Download

IPA60R380C6 Datasheet PDF – 600V, MOSFET, Transistor

Description

IPA60R380C6 Datasheet PDF Download