Part Number: K2985

Function: 45A, 60V, N-Channel MOSFET

Package: TO-220 Type

Manufacturer: Toshiba

Images :

Description

This is 45A, 60V, Silicon N Channel MOS Type Field Effect Transistor.

Featues :

1. Low drain-source ON resistance  : RDS (ON)= 4.5 mΩ(typ.)
2. High forward transfer admittance  : |Yfs| = 70 S (typ.)
3. Low leakage current  : IDSS= 100 µA (max) (VDS= 60 V)
4. Enhancement−mode : Vth= 1.3~2.5 V (VDS= 10 V, ID= 1mA)

Pinouts

Absolute maximum ratings

1. Drain−source voltage: VDSS = 60 V
2. Drain−gate voltage (RGS = 20 kΩ): VDGR = 60
V
3. Gate−source voltage: VGSS = ±20 V
4. Drain current (DC) : ID = 45 A
5. Drain power dissipation (Tc = 25°C): PD = 45 W
6. Single pulse avalanche energy : EAS = 701 mJ
7. Avalanche current : IAR = 45 A
8. Repetitive avalanche energy : EAR = 4.5 mJ
9. Channel temperature: Tch = 150 °C
10. Storage temperature range : Tstg = -55~150 °C

 

Applications

1. DC−DC Converter
2. Relay Drive and Motor Drive

Other data sheets are available within the file: 2SK2985

K2985 Datasheet PDF Download

 

Part Number: K3151

Function: 50A, 100V, Silicon N Channel MOSFET

Package: TO-3P Type

Manufacturer: Hitachi ( Renesas Electronics )

Image and Pinouts:

 

Description

This is 100V, 50A, N-Channel MOSFET.

Features

1. Low on-resistance : RDS (on)= 11.5 mΩtyp.
2. High speed switching
3. 4 V gate drive device can be driven from 5 V source

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 100 V
2. Gate to source voltage: VGSS = ±20 V
3. Drain current: ID = 50 A
4. Drain peak current : ID(pulse) = 200 A
4. Body-drain diode reverse drain current : IDR = 50 A
5. Avalanche current : IAP = 50 A
6. Avalanche energy : EAR = 250 mJ
7. Channel dissipation: Pch = 125 W
8. Channel temperature: Tch = 150 °C
9. Storage temperature: Tstg = -55 to +150 °C

Applications

1. High Speed Power Switching

Other data sheets are available within the file: 2SK3151

K3151 Datasheet PDF Download