MOSFET

K1670 Datasheet PDF – 250V, 30A, N-Ch, MOSFET

Posted on by pinout

Part Number: K1670

Function: 30A, 250V, Silicon N-Channel MOSFET

Package: TO-3PFM Type

Manufacturer: Hitachi ( Renesas Electronics )

Image and Pinouts:

K1670 datasheet

Description

This is 250V, 30A, N-Channel MOSFET.

Features

1. Low on-resistance
2. High speed switching
3. Low drive current
4. Built-in fast recovery diode (trr= 90 ns)
5. Suitable for motor control, switching regulator and DC – DC converter

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 250 V
2. Gate to source voltage: VGSS = ±30 V
3. Drain current: ID = 30 A
4. Drain peak current : ID(pulse) =  120 A
5. Body to drain diode reverse drain current : IDR = 30 A
6. Channel dissipation: Pch =  60 W
7. Channel temperature: Tch = 150 °C
8. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file: 2SK1670

K1670 Datasheet PDF Download


K1670 pdf

K4005-01MR PDF Datasheet – 900V, 6A, MOSFET – Fuji

Posted on by pinout

This post explains for the MOSFET.

The Part Number is 2SK4005-01MR.

The function of this semiconductor is 900V, 6A, MOSFET.

The package is TO-220F type

Manufacturer: Fuji Electric

Images and Pinouts:

K4005-01MR datasheet pdf

Description

This is N-Channel enhancement mode power MOSFET.

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 900 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 6A

4. Maximum Power Dissipation: Pd = 2.16 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology C o.,Ltd. DRAWN DATE Jan.-31-05 CHECKED Jan.-31-05 Jan.-31-05 Date Spec. No. Device Name Type Name : : : : NAME APPROVED SPECIFICATION Jan.-31-2005 2SK4005-01MR Power MOSFET MS5F5984 DWG.NO. MS5F5984 1 / 18 Fuji Electric Device Technology Co.,Ltd. H04-004-05. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of Fuji Electric Device Technology C o.,Ltd. 2 […]

 

K4005-01MR Datasheet