This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K3919

Function: 25V, 64A,  SWITCHING N-CHANNEL POWER MOSFET

Package: TO-251 Type

Manufacturer: NEC, Renesas Electronics

Image

Description

The K3919 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

 

K3919 Pinout

 

Features

1. Low on-state resistance : RDS(on)1= 5.6 mΩMAX. (VGS= 10 V, ID= 32 A)
2. Low Ciss: Ciss= 2050 pF TYP.
3. 5 V drive available

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 25 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 64 A
4. Drain power dissipation : PD = 36 W
5. Single pulse avalanche energy : Eas = 73 mJ
6. Avalanche curren : Iar = 27 A
7. Channel temperature: Tch = 150 °C
8. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file: 2SK3919, 2SK3919-ZK, K3919-ZK

K3919 Datasheet PDF Download

 

Part Number: 2SK2724

Function:  35A, 60V, N-Channel Power MOSFET

Package: TO-220 Type

Manufacturer: NEC ( Renesas Technology )

Image and Pinouts:

Description

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.

Features

1. Low On-Resistance
(1) Rds(on)1 = 27 mΩ Max. ( Vgs = 10 V, Ld = 18 A )
(2) Rds(on)2 = 40 mΩ Max. ( Vgs = 4 V, Ld = 18 A )

2. Low Ciss, Ciss = 1200pF Typ.
3. Built-in G-S Protection Diode

Absolute Maximum ratings ( Ta = 25°C )

1. Drain to Source Voltage : Vdss = 60 V
2. Gate to Source Voltage : Vgss = ±20 V
3. Drain Current(DC) : Id(DC) =  ±35 A
4. Drain Current(Pulse) : Id(pulse) =  ±140 A
5. Total Power Dissipation : Pt = 2.0 W
6. Total Power Dissipation( Tc = 25°C ) : Pt = 30 W
7. Channel Temperature : Tch = 150 °C
8. Storage Temperature : Tstg = -55 to +150°C

Other data sheets are available within the file: K2724

2SK2724 Datasheet PDF Download