Part Number: K1164, 2SK1164

Function: 11A, 500V, Silicon N-Channel MOSFET

Package: TO-3P Type

Manufacturer: Hitachi ( Renesas Electronics )

Image and Pinouts:

 

Description

This is 500V, 11A, N-Channel MOSFET.

Features

1. Low on-resistance
2. High speed switching
3. Low drive current
4. No secondary breakdown
5. Suitable for switching regulator and DC-DC converter

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : Vdss = 500 V
2. Gate to source voltage: VGSS = ±30 V
3. Drain current: ID = 11 A
4. Drain peak current : ID(pulse) = 40 A
5. Body to drain diode reverse drain current : IDR = 11 A
6. Channel dissipation: Pch = 100 W

Applications:

High speed power switching

Other data sheets are available within the file: 2SK1163, 2SK1164, K1163

K1164 Datasheet PDF Download

Related articles across the web

• General Purpose Photocoupler

Part Number: FDG328P

Function: P-Channel 2.5V Specified PowerTrench MOSFET

Package: SC−88 / SC70−6 / SOT−363 Type

Manufacturer: Fairchild Semiconductor

Image and Pinouts:

 

Description

This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5V – 12V).

Features

1. -1.5 A, –20 V.
(1) Rds(on)= 0.145 Ω@ Vgs= –4.5 V
(2) Rds(on)= 0.210 Ω@ Vgs= –2.5 V

2. Low gate charge

3. High performance trench technology for extremely low Rds(on)

4. Compact industry standard SC70-6 surface mount package

 

Applications

1. Load switch

2. Power management

3. DC/DC converter

Other data sheets are available within the file: FDG328, FDG-328P, FDG-328

 

FDG328P Datasheet PDF Download