MOSFET

K3325-S Datasheet PDF – 500V, N-Ch, MOSFET, 2SK3325

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Part Number: K3325-S

Function: 500V, 10A, N-CHANNEL POWER MOSFET

Package: TO-220AB, TO-262, TO-263 Type

Manufacturer: NEC ( Renesas Technology )

Image and Pinouts:
K3325-S datasheet

Description

The 2SK3325, K3325-S is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

Features

1. Low gate charge : QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A)
2. Gate voltage rating : ±30 V
3. Low on-state resistance RDS(on) = 0.85 W MAX. (VGS = 10 V, ID = 5.0 A)
4 .Avalanche capability ratings

components

Absoulte Maximum Ratings

1. Drain to Source Voltage (VGS = 0 V) : VDSS = 500 V
2. Gate to Source Voltage (VDS = 0 V) : VGSS(AC) = ±30 V
3. Drain Current (DC) : ID(DC) = ±10 A
4. Drain Current (pulse) : ID(pulse) = ±40 A

 

Other data sheets are available within the file: 2SK3325, 2SK3325-S, 2SK3325-ZJ, K3325

K3325-S Datasheet PDF Download

K3325-S pdf


 

2SK1155 MOSFET – 450V, 5A, Transistor ( Datasheet PDF )

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Part Number: 2SK1155

Function: 450V, 5A, N-Channel MOSFET

Package: TO-220AB Type

Manufacturer: Renesas Electronics

Image and Pinouts:

2SK1155 datasheet

 

Description

This is a Silicon N Channel MOSFET(450V, 5A).

Let’s take a look at the features of this MOSFET.

1.  Low on-resistance

2.  High speed switching

3.  Low drive current

4.  No secondary breakdown

5.  Suitable for switching regulator and DC-DC converter

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 450 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 5 A

4. Channel dissipation: Pch =50 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Application:

1. High speed power switching

 

2SK1155 Datasheet PDF Download


2SK1155 pdf

Other data sheets are available within the file: K1155