07N60S5 PDF – 600V, MOSFET, Transistor – Infineon

Posted on December 1, 2021May 26, 2022 by pinout

Part Number: 07N60S5, SPU07N60S5, SPD07N60S5

Function: 600V, 7.3A, Cool MOS Power Transistor

Package: TO-252, TO-251 type

Manufacturer: Infineon Technologies

Image and Pinouts:
07N60S5 datasheet

Description

This is Cool MOS Power Transistor. ( MOSFET )

Features

1. New revolutionary high voltage technology

2. Worldwide best RDS(on)in TO-251 and TO-252

3. Ultra low gate charge

4. Periodic avalanche rated

5. Extreme dv/dt rated

6. Ultra low effective capacitances

7. Improved transconductance

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 7.3 A (Tc = 25°C)

4. Power Dissipation: Pd = 83 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

07N60S5 Datasheet PDF Download

Other data sheets are available within the file: Q67040-S4186, Q67040-S4196, SPD07N60S5, SPU07N60S5

W10NK80Z Datasheet PDF – 9A, 800V, N-Ch, MOSFET

Posted on November 28, 2021March 14, 2022 by pinout

Part Number: W10NK80Z

Function: N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH Power MOSFET

Package: TO-220, TO-220FP and TO-247 Type

Manufacturer: STMicroelectronics

Image:

W10NK80Z datasheet

Description

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics SuperMESH technology, achieved through optimization of STs well established strip-based PowerMESH layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Features

1. Extremely high dv/dt capability

2. 100% avalanche tested

3. Gate charge minimized

4. Very low intrinsic capacitances

5. Very good manufacturing repeability

W10NK80Z Datasheet PDF Download

Other data sheets are available within the file:

STP10NK80Z, STP10NK80ZFP ,STW10NK80Z, W10NK80