MOSFET

94-4311 Datasheet – 55V, 98A, MOSFET, TO-220 – IR

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Part Number: 94-4311, 94-4311PBF

Function: MOSFET, 55V, 98A, 8 mOhm, 97.3 nC Qg

Package: TO-220AB Type

Manufacturer: International Rectifier, ( https://www.infineon.com/ )

Image: 94-4311

Description

The 94-4311 is 55V, MOSFET.

Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Features

1. Advanced Process Technology

2. Ultra Low On-Resistance

3. Dynamic dv/dt Rating

4. 175°C Operating Temperature

5. Fast Switching

6. Fully Avalanche Rated

7. Lead-Free

 

94-4311 Datasheet

94-4311 Datasheet

94-4311 pdf

BUZ71A Datasheet – 50V,13A, N-Ch, MOSFET, TO-220 (PDF)

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Part Number: BUZ71A

Function: 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET

Package: TO-220AB Type

Manufacturer: Intersil

Image and Pinouts:

BUZ71A datasheet

 

Description

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.

Features

1. 13A, 50V

2. rDS(ON)= 0.120Ω

3. SOA is Power Dissipation Limited

4. Nanosecond Switching Speeds

5. Linear Transfer Characteristics

6. High Input Impedance

7. Majority Carrier Device

8. Related Literature
– TB334 “Guidelines for Soldering Surface MountComponents to PC Boards”

Absolute Maximum Ratings :

1. Drain to Source Breakdown Voltage : VDS = 50 V

2. Drain to Gate Voltage (RGS = 20kΩ): VDGR = 50 V

3. Continuous Drain Current, TC = 55°C : ID = 13 A

4. Pulsed Drain Current : IDM = 48 A

5. Gate to Source Voltage : VGS = ±20 V

6. Maximum Power Dissipation : PD = 40 W

7. Single Pulse Avalanche Energy Rating : EAS = 100 mJ

BUZ71A Datasheet PDF Download


BUZ71A pdf

Other data sheets are available within the file: BUZ71