MOSFET

MS1307 Datasheet – 100V, 14A, 88W, N-Ch, MOSFET, TO-220

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Part Number: MS1307

Manufacturer: International Rectifier

Function: MOS power N-Channel FET, 100V, 14A, 88W

Package: TO-220 type

Image:

MS1307 Datasheet

MS1307 Datasheet

MS1307 = IRF530 = BUZ20

 

IRF530 Datasheet

International Rectifier : IRF530.PDF

Vishay : IRF530.PDF

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

Features

• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC

33N10 Datasheet PDF – N-Ch, 100V, MOSFET – Infineon

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Part Number: 33N10, FQP33N10

Function: 100V, N-Channel MOSFET

Package: TO-220 Type

Manufacturer: Infineon Technologies

Images:

33N10 MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. […]

Pinout

33N10 datasheet pinout

Features

1. 33A, 100V, RDS(on) = 0.052Ω @VGS = 10 V
2. Low gate charge ( typical 38 nC)
3. Low Crss ( typical 62 pF)
4. Fast switching
5. 100% avalanche tested
6. Improved dv/dt capability
7. 175°C maximum junction temperature rating

Absolute Maximum Ratings ( Tc = 25’C )

1. Drain-Source Voltage : Vdss = 100 V
2. Drain Current : Id = 33 A
3. Drain Current – Pulsed : Idm = 132 A
4. Gate-Source Voltage : Vgss = +- 25V
5. Single Pulsed Avalanche Energy : Eas = 435 mJ

33N10 Datasheet