Part Number: K1122

Function: 100V, 40A, N-channel MOSFET

Package: TO-3P Type

Manufacturer: NEC (Renesas Technology)

Image and Pinouts:

 

Description

The K1122 is 100V, 40A, N-channel MOS Field Effect Transistor.

Features

1. Low On-state Resistance

2. Low Ciss = 3,300pF Typ

3. Built-in G-S Gate Protection Diodes

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 100 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = ± 40 A

4. Total Power Dissipation: Pd = 3 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Solenoid, motor and lamp driver.

K1122 Datasheet PDF Download

Other data sheets are available within the file: 2SK1122

Part Number: NDT2955

Function: – 60V, – 2.5A, P-Channel Enhancement Mode Field Effect Transistor

Package: SOT-223 Type

Manufacturer: Fairchild Semiconductor

Image and Pinouts:

 

Description

Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

These devices are particularly suited for low voltage applications such as notebook computer power management and DC motor control.

This 60V, P-Channel MOSFET is produced using Fairchild Semiconductor’s high voltage Trench process. It has been optimized for power management plications.

Features

1. -2.5A, -60V. RDS(ON) = 0.3W @ VGS = -10V.

2. High density cell design for extremely low RDS(ON).

3. High power and current handling capability in a widely used surface mount package.

Applications

1. DC/DC converter
2. Power management

 

NDT2955 Datasheet PDF Download

Other data sheets are available within the file: NDT-2955