MOSFET

HY3506 PDF Datasheet – 60V, N-Channel MOSFET

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Part Number: HY3506, HY3506B

Function: 60V, N-Channel Enhancement Mode MOSFET

Package: TO-220FB-3L, TO-263-2L

Manufacturer: HOOYI ( http://www.hymexa.com/ )

Images:

HY3506 datasheet transistor

Features

1. 60V/190A RDS(ON)= mΩ (typ.) @ VGS=10V

2. Reliable and Rugged

3. Lead Free and Green Devices Available  (RoHS Compliant)

Absolute Maximum Ratings (Tc = 25°C)

1. Drain to source voltage: VDSS = 60 V
2. Gate to source voltage: VGSS = ± 25 V
3. Maximum Junction Temperature: Tj = 175 °C
4. Storage temperature: Tstg = -55 to +175 °C

[…]

Applications

1. Switching application

2. Power Management for Inverter Systems

Other data sheets are available within the file: HY3506P, HY3506B

HY3506 Datasheet

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NDS351AN Datasheet PDF – 30V, 1.4A, N-Ch, MOSFET

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Part Number: NDS351AN

Function: N-Channel Logic Level Enhancement Mode Field Effect Transistor

Package: SuperSOT-3 Type

Manufacturer: Fairchild Semiconductor

Image and Pinouts:

NDS351AN datasheet

 

General

Description

This is 30V, 1.4A, N-Channel MOSFET.

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

 

Features

1. Ultra-Low gate charge

2. Industry standard outline SOT-23 surface mount package using proprietary SuperSOT-3 design for superior thermal and electrical capabilities

3. High performance trench technology for extremely low RDS(ON)

 

NDS351AN Datasheet PDF Download


NDS351AN pdf

Other data sheets are available within the file: NDS351A, NDS351