MOSFET

K2724 Datasheet – MOSFET, 60V, 35A, N-Ch, Transistor, TO-220

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Part Number: K2724

Function: 60V, 35A, N-CHANNEL POWER MOSFET

Package: TO-220 Type

Manufacturer: Renesas Electronics

Image and Pinouts:

K2724 datasheet

Description

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.

Features

1. Low On-Resistance :

(1) RDS(on)1 = 27 mΩ Max. (VGS = 10 V, ID = 18 A)
(2) RDS(on)2 = 40 mΩ Max. (VGS = 4 V, ID = 18 A)

2. Low Ciss Ciss =1 200 pF Typ.

3. Built-in G-S Protection Diode

components

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 35 A

4. Total Power Dissipation : Pt = 2 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Other data sheets are available within the file: 2SK2724

K2724 Datasheet PDF Download


K2724 pdf

MTP3055V Datasheet PDF – 12A, 60V, MOSFET

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Part Number: MTP3055V

Function: N-Channel Power MOSFET (12 Amps, 60 Volts)

Package: TO-220 Type

Manufacturer: ON Semiconductor

Image and Pinouts:

MTP3055V datasheet

 

Description

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

Features

• On−resistance Area Product about One−half that of Standard MOSFETs with New
Low Voltage, Low RDS(on)Technology

• Faster Switching than E−FET Predecessors

• Avalanche Energy Specified

• IDSS and VDS(on)Specified at Elevated Temperature

• Static Parameters are the Same for both TMOS V and TMOS E−FET

 

MTP3055V Datasheet PDF Download


MTP3055V pdf

Other data sheets are available within the file: MTP3055