MOSFET

ME60N03A Datasheet PDF – 25V, 50A, N-Ch, MOSFET

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Part Number: ME60N03A

Function: 25V, N-Channel Enhancement Mode MOSFET

Package: TO-252 Type

Manufacturer: Matsuki Electric

Image

ME60N03A datasheet mosfet

Description

This is 25V, 50A, N-Channel MOSFET.

1. Advanced trench process technology
2. High density cell design for ultra low on-resistance
3. Specially designed for DC/DC converters and motor drivers
4. Fully characterized avalanche voltage and current

 

Features

1. VDS=25V
2. RDS(ON), Vgs@10V,Ids@30A = 8.5mΩ
3. RDS(ON), Vgs@4.5V,Ids@30A =13mΩ

Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)

1. Drain-Source Voltage : VDSS = 25 V
2. Gate-Source Voltage : VGSS = ±20 V
3. Continuous Drain Current : ID = 50 A
4. Pulsed Drain Current : IDM = 100 A

Pinouts:
ME60N03A pinout

ME60N03A Datasheet PDF Download


 

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K2096 Datasheet – MOSFET, 60V, 45A, Transistor, TO-3P

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Part Number: K2096

Function: 60V, 45A, N-Channel MOSFET

Package: TO-3P type

Manufacturer: Renesas Electronics

Image and Pinouts:

K2096 datasheet

 

Description

This is 60V, 45A, Silicon N-Channel MOSFET.

Features

1.  Low on-resistance

2. High speed switching

3. Low drive current

4.  4 V gate drive device can be driven from 5 V source

5. Suitable for switching regulator, DC-DC converter

6. Avalanche ratings

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 45 A

4. Channel dissipation: Pch = 100 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. High speed power switching

Other data sheets are available within the file: 2SK2096, 2SK2096-E, K2096E

K2096 Datasheet PDF Download


K2096 pdf