MOSFET

70S600P7 MOSFET – 700V, 20.5A, TO-252, Power Transistor

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: IPD70R600P7S

Marking : 70S600P7

Function: 700V, 20.5A, CoolMOS Power Transistor

Package: PG-TO-252-3 Type

Manufacturer: Infineon

Images:

70S600P7 mosfet datasheet

Description

70S600P7 MOSFET is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by InfineonTechnologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.

 

Features
1. Extremely low losses due to very low FOMRDS(on)*QgandRDS(on)*Eoss
2. Excellent thermal  behavior
3. Integrate ESD protection diode
4. Low switching losses(Eoss)
5. Product validation acc. JEDEC Standard

Benefits
1. Cost competitive technology
2. Lower temperature
3. High ESD ruggedness
4. Enables efficiency gains at higher switching frequencies
5. Enables high power density designs and small form factors

Applications

1. Recommended for Flyback topologies for example used in Chargers

2. Adapters, Lighting Applications, etc.

70S600P7 Pinout

70S600P7 transistor pinout

Key Performance Parameters

1. VDS @ Tj=25°C : 700 V
2. RDS(on),max : 0.6 Ω
3. Qg,typ : 10.5 nC
4. ID,pulse : 20.5 A
5. Eoss @ 400V : 1.2 µJ
6. V(GS)th,typ : 3 V

70S600P7 Datasheet

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CS150N03 Datasheet – 30V, 150A, N-Ch, MOSFET (Transistor)

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: CS150N03

Function: Silicon N-Channel Power MOSFET ( 30V, 150A )

Package: TO-220AB Type

Manufacturer: WUXI CHINA RESOURCES HUAJING MICROELECTRONICS

( http://www.crhj.com.cn )

Image

CS150N03 transistor mosfet

Description

CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard

Features

1. Fast Switching
2. LowON Resistance(Rdson≤3.5mΩ)
3. Low Gate Charge (Typical Data:75nC)
4. Low Reverse transfer capacitances(Typical:800pF)
5. 100%Single Pulse avalanche energy Test

Applications： UPS, Inverter, Lighting

Pinouts:

CS150N03 pinout datasheet

Absolute Maximum Ratings (Tc = 25°C)

1. Drain to source voltage: VDSS = 30 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 150 A
4. Drain power dissipation : PD = 100 W
5. Single pulse avalanche energy : Eas =1300 mJ
6. Channel temperature: Tch = -55 to +175 °C
7. Storage temperature: Tstg = -55 to +175 °C

Other data sheets are available within the file: CS150N03A8

CS150N03 Datasheet PDF Download

CS150N03 pinout


 

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