Part Number: K2012

Function: 250V, 18A, N-Channel MOSFET, Transistor

Package: TO-220ML Type

Manufacturer: SANYO (Panasonic)

Image and Pinouts:

 

Description

This is 250V, 18A, N-Channel Silicon MOSFET.

Features

1. Low ON-resistance.

2. Ultrahigh-speed switching.

3. Low-voltage drive.

4. Micaless package facilitating mounting.

Test Circuit :

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 250 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 18 A

4. Allowable Power Dissipation: Pd = 2 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Ultrahigh-Speed Switching

 

 

Other data sheets are available within the file: 2SK2012

K2012 Datasheet PDF Download

Part Number: RU6099R

Function: 60V, 120A, N-Channel MOSFET

Package: TO-220 Type

Manufacturer: Ruichips Semiconductor

Image and Pinouts:

 

Description

This is N-Channel Advanced Power MOSFET.

 

Features

1. 60V / 120A, Rds(on) = 6mOhm(Typ.) @ Vgs = 10V

2. Ultra Low On-Resistance

3. Exceptional dv/dt capability

4. Fast Switching and Fully Avalanche Rated

5. 100% avalanche tested

6. 175 °C Operating Temperature

7. Lead Free and Green Available

 

Applications:

1. Switching Application Systems

2. Inverter Systems

 

RU6099R Datasheet PDF Download

Other data sheets are available within the file: RU6099

Related articles across the web

• General-Purpose Operational Amplifier