80NF70 Datasheet – 68V, MOSFET – STP80NF70 (Transistor)

This post explains for the semiconductor 80NF70.

The Part Number is 80NF70, STP80NF70.

The function of this semiconductor is 68V, N-channel MOSFET.

The package is TO-220 Type

Manufacturer: ST Microelectronics

See the preview image and the PDF file for more information.

Images:

80NF70 transistor
1 page

Description

STP80NF70 N-channel 68 V, 0.0082 Ω , 98 A, TO-220 STripFET™ II Power MOSFET Features Type STP80NF70 ■ VDSS 68 V RDS(on) max < 0.0098 Ω ID 98 A Exceptional dv/dt capability 100% avalanche tested 1 3 2 Application ■ TO-220 Switching applications Description The STP80NF70 is a N-channel Power MOSFET realized with STMicroelectronics unique STripFET™ process. It has specifically been designed to minimize input capacitance and gate charge. The device is therefore suitable in advanced high-efficiency switching applications. Figure 1. Internal schematic diagram Table 1. Device summary Marking 80NF70 Package TO-220 Packaging Tube Order code STP80NF70 June 2010 Doc ID 17610 Rev 1 1/13 www.st.com 13 Contents STP80NF70 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . […]

80NF70 pinout

80NF70 pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 68 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 98 A
4. Drain power dissipation : PD = 190 W
5. Single pulse avalanche energy : Eas = 700 mJ
6. Channel temperature: Tch = 150 °C
7. Storage temperature: Tstg = -55 to +150 °C

 

80NF70 Datasheet

80NF70 pdf

ME15N10-G Datasheet – N-Ch, 100V, MOSFET (Transistor)

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: ME15N10-G

Function: N-Channel,  100V,  MOSFET (Transistor)

Package: TO-232-3L Package

Manufacturer: Matsuki Electic

Image

ME15N10-G MOSFET

Description

The ME15N10-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.

Pinout
ME15N10-G Datasheet

Applications

1. Power Management in Note book
2. DC/DC Converter
3. Load Switch
4. LCD Display inverter

Other data sheets are available within the file: ME15N10

ME15N10-G Datasheet PDF

ME15N10-G pdf

 


 

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