5N52U Datasheet – N-Ch 525V, 1.28Ohm Power MOSFET – ST

Part Number: 5N52U, STD5N52U

Function: N-channel 525 V, 1.28 Ω, 4.4 A, UltraFASTmesh™ Power MOSFET

Package: DPAK, TO-220FP, I2PAK  Type

Manufacturer: STMicroelectronics

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5N52U mosfet

Features

1. 100% avalanche tested

2. Outstanding dv/dt capability

3. Gate charge minimized

4. Very low intrinsic capacitances

5. Very low RDS(on)

6. Extremely low trr

Pinouts:
5N52U datasheet

Description

These devices are N-channel Power MOSFETs developed using UltraFASTmesh™ technology, which combines the advantages of reduced onresistance, Zener gate protection and very high dv/dt capability with an enhanced fast body-drain recovery diode.

 

components

5N52U Datasheet


 

STD5N52U pdf

Other data sheets are available within the file: STD5N52U, STF5N52U, STI5N52U

D478 Datasheet PDF – 100V, 11A, N-ch, MOSFET, AOD478

Part Number: D478, AOD478, AOI478

Function: 100V, 11A, N-Channel MOSFET

Package: TO252, TO251A Type

Manufacturer: Alpha and Omega Semiconductor

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D478 mosfet

General Description

The D478, AOD478, AOI478 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.

Pinout

D478 datasheet pinout

 

Product Summary

1. VDS : 100V

2. ID(at VGS=10V) : 11A

3. RDS(ON)(at VGS=10V) : < 140mΩ

4. RDS(ON) (at VGS= 4.5V) : < 152mΩ

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 100 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 11 A (Tc = 25°C)

4. Drain Power Dissipation: Pd = 45 W

5. Junction temperature : Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

 

Official Homepage: http://www.aosmd.com/

D478 Datasheet PDF

AOD478 pdf


 

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