MOSFET

H9N03LA Datasheet – 25V, 30A, OptiMOS Power Transistor

Posted on by pinout

Part Number: H9N03LA

Function: 25V, 30A, OptiMOS 2 Power Transistor

Package: TO-252-3, TO-251-3 Type

Manufacturer: Infineon Technologies

Pinouts:

H9N03LA datasheet

 

Description

1. Ideal for high-frequency dc/dc converters
2. Qualified according to JEDEC for target application
3. N-channel, logic level
4. Excellent gate charge x RDS(on)product (FOM)
5. Superior thermal resistance
6. 175 °C operating temperature
7. Pb-free lead plating; RoHS compliant

Absolute maximum ratings ( Tc=25’C )

1. Continuous drain current : Id = 30 A
2. Pulsed drain current : Id, pulse = 210 A
3. Avalanche energy, single pulse : Eas = 80 mJ
4. Gate source voltage :  VGS = ±20 V
5. Power dissipation : P tot =  52 W

Other data sheets are available within the file: H9N03, IPDH9N03LAG, IPSH9N03LAG

H9N03LA Datasheet PDF Download


H9N03LA pdf

 

RFP70N03 Datasheet PDF – 70A, 30V, N-Ch, MOSFET – Harris

Posted on by pinout

Part Number: RFP70N03

Function: 70A, 30V, 0.010 Ohm, N-Channel Power MOSFET

Package: TO-220AB, TO-262AA, TO-263AB Type

Manufacturer: Harris Semiconductor

Pinouts:

RFP70N03 datasheet

Description

The RFP70N03, RF1S70N03, and RF1S70N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approach ing those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors can be operated directly from integrated circuits.

Features

1. 70A, 30V
2. rDS(ON) = 0.010Ω
3. Temperature Compensating PSPICE Model
4. Peak Current vs Pulse Width Curve
5. UIS Rating Curve (Single Pulse)
6. +175°C Operating Temperature

components

Other data sheets are available within the file: F1S70N03, RF1S70N03, RF1S70N03SM

RFP70N03 Datasheet PDF Download

RFP70N03 pdf