Part Number: BU3150AF

Function: 800V, 3A, NPN Power Transistor

Package: TO-220F type

Manufacturer: Shenzhen Jingdao Electronic

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Description

BU3150AF is 800V, 3ANPN Power Transistor.

 

Features：

1. High Current capacity speed B.Base C.Collector E.Emitter

2. High switching

3. Wide safe operation area

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1100  V

2. Collector to Emitter Voltage: Vceo = 800 V

3. Emitter to Base Voltage: Vebo = 9 V

4. Collector Current: Ic = 3 A

5. Total Dissipation: Pc = 50 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperatue: Tsg = -55 ~ +150°C

 

Applications：

1. Electronical Ballasts for fluorescent lighting

2. Charger and Switch mode power supplies

BU3150AF PDF Datasheet

Part Number: H669A

Function: 160V, NPN Silicon Transistor

Package: TO-126ML Type

Manufacturer: huashan

Images:

Description

H669A is 160V, 1.5A NPN SILICON TRANSISTOR. 

1. Current Amplification: NPN transistors are designed to amplify electrical current, and can be used in a wide range of electronic applications such as amplifiers, switches, and oscillators.

2. Forward Biased: In order to operate, the base-emitter junction of an NPN transistor must be forward biased, meaning that the base must be connected to a positive voltage relative to the emitter.

3. High Input Impedance: NPN transistors have a high input impedance, which means that they are less likely to draw current from the input source, and are therefore less likely to cause a drop in voltage across the source.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 180 V

2. Collector to Emitter Voltage: Vceo = 160 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 1.5 A

5. Total Dissipation: Pc = 1W

 

Applications:

1. For low frequency power amplification.

 

H669A PDF Datasheet

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