Part Number: C5387, 2SC5387

Function: 600V, 10A, NPN Transistor

Package: TO-3ML Type

Manufacturer: Toshiba Semiconductor

Images:

Description

C5387 is 600V, 10A, SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR.

Features

1. High Voltage : VCBO = 1500 V

2. Low Saturation Voltage : VCE (sat) = 3 V (Max.)

3. High Speed : tf = 0.15 μs (Typ.)

4. Collector Metal (Fin) is Fully Covered with Mold Resin.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1500 V

2. Collector to Emitter Voltage: Vceo = 600 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 10 A

5. Collector Dissipation : Pc = 50 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION

2. DISPLAY, COLOR TV

3. HIGH SPEED SWITCHING APPLICATIONS

 

C5387 PDF Datasheet

Part Number: C1627, 2SC1627

Function: 80V, 300mA, NPN Transistor

Package: TO-92 Type

Manufacturer: Toshiba Semiconductor

Images:

Description

The C1627 is Silicon NPN Epitaxial Type Transistor. 

Features

1. Complementary to 2SA817

2. Driver stage application of 20 to 25 watts amplifiers

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 80 V

2. Collector to Emitter Voltage: Vceo = 80 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 300 mA

5. Collector Dissipation : Pc = 600 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. Driver Stage

2. Voltage Amplifier

C1627 PDF Datasheet