C536 Transistor – 30V, 100mA, NPN, Datasheet, 2SC536

Part Number: C536, 2SC536

Function: 30V, 100mA, NPN Transistor

Package: TO-92 Type

Manufacturer: WEJ

Images:C536 pdf datasheet

Description

The 2SC536 is NPN Transistor.

Features

1. Power dissipation : PCM = 400 mW (Tamb=25℃)

2. Collector current : ICM = 100 mA

3. Collector-base voltage : V(BR)CBO =  40 V

4. Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 40 V

2. Collector to Emitter Voltage: Vceo = 30 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 100 mA

5. Collector Dissipation : Pc = 400 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. Switching and AF amplifier

 

 

C536 PDF Datasheet

C536 pdf

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C3209 Transistor – 300V, 200mA, NPN, Equivalent ( 2SC3209 )

Part Number: C3209, 2SC3209

Function: 300V, 200mA, NPN Transistor

Package: TO-126 Type

Manufacturer: NEC Electronics

Images:C3209 pdf pinout

Description

C3209 is 300V, 200mA, NPN Silicon Transistor. 

The transistor is designed for use in TV chroma output circuits and TV horizontal deflection output circuits.

Features

1. High voltage : Vceo ≥ 300 V

2. High Electrosatic ( E-B reverse bias, C = 2,300 pF )

3. Discharge-Resistant : Vesdr : Typ 1,000 V

C3209 datasheet transistor

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 300 V

2. Collector to Emitter Voltage: Vceo = 300 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 200 mA

5. Total Power Dissipation : Pc = 1 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

C3209 PDF Datasheet